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 2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 600 400 7 7(Pulse14) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-0.5A VCB=10V, f=1MHz Ratings 100max 100max 400min 10 to 25 0.7max 1.3max 10typ 55typ
(Ta=25C) Unit
External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V V V MHz pF
13.0min 16.90.3 8.40.2
A
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 67 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.6 IB2 (A) -1.2 ton (s) 0.5max tstg (s) 2max tf (s) 0.15max
2.54
3.9 BCE
IC - VCE Characteristics (Typical)
7
1A
VCE( sat ) - IC Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t)( V ) 1.0 IC/IB=5 Const.
I C - V BE Temperature Characteristics (Typical)
7 (VCE=4V)
800mA
6 Collector Current I C (A)
60 0m A
6 Collector Current I C (A)
5
40 0m A
5
300 mA
4
200m A
4
0.5
125C (Case Temp)
mp) e Te (Cas
Tem
25C
-30C (Case Temp)
0
0
1
2
3
4
0 0.02
0.05
0.1
0.5
1
5
10
0
0
0.5 Base-Emittor Voltage V B E( V)
125
1
1
-30C
C
IB=5 0mA
(Ca
25C (Case Temp)
se
2
2
(Case
Temp
p)
3
3
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Part No. b. Lot No.
)
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
(VCE=4V) 50 DC C urrent G ain h FE 2
j- a( C/W)
hFE - IC Temperature Characteristics (Typical)
ton*t s t g*t f ( s)
125C
t on *t stg * tf - I C Characteristics (Typical)
tstg
j-a - t Characteristics
4
1 0.5 tf ton 0.1 0.05 0.02 0.2 V C C 200V IC:I B1: IB2=5:1:-2 0.5 1 5 Collector Current I C( A)
25C
-30C
Transient Thermal Resistance
Sw it ching Time
1
10
0.5 0.3
5 0.02
0.05
0.1
0.5
1
5
7
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5 Co lle ctor Cu rren t I C( A)
10
Reverse Bias Safe Operating Area
20 10 30
P c - T a Derating
s
5
Ma xim um Powe r Dissipat io n P C( W)
0
W ith
Collector Cur rent I C( A)
20
In fin ite he at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1%
nk
0.5
Without Heatsink Natural Cooling
0.5
10
Without Heatsink 2 0.1 10 50 100 500 700 0.1 10 50 100 500 700 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
115
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